GaN heterostructures in microwave electronics: scientific papers review
نویسندگان
چکیده
منابع مشابه
Coaxial GaN/InGaN/GaN Nano-Heterostructures
The optimization of the epitaxial quality and ordering of coaxial GaN/InGaN/GaN nanoheterostructures is the main focus of this study. Two approaches for the realization of upright ZnO nanipillars, used as templates for the epitaxially grown GaN layers, with their respective degrees of pattern arrangement are introduced. Consequently, the growth of coaxial GaN/InGaN/GaN quantum wells (for three ...
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Nonequilibrium dc and large-signal ac vertical electron transport in GaN/AlGaN heterostructures is investigated by Monte Carlo simulations. The symmetric two-barrier GaN/AlGaN heterostructures are studied. The results of simulations show that polarization charges have a profound effect on dc and large-signal ac characteristics of vertical electron transport in GaN/AlGaN heterostructures. Under ...
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L. E. Byrum, G. Ariyawansa, R. C. Jayasinghe, N. Dietz, A. G. U. Perera, S. G. Matsik, I. T. Ferguson, A. Bezinger, and H. C. Liu Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA NDP Optronics LLC, Mableton, Georgia 30126, USA School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30032, USA Institute for Micros...
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ژورنال
عنوان ژورنال: ELECTRONICS: Science, Technology, Business
سال: 2018
ISSN: 1992-4178
DOI: 10.22184/1992-4178.2018.177.6.70.73